IEEE - Institute of Electrical and Electronics Engineers, Inc. - Matching analysis of NMOS-transistors with a channel length down to 30 nm

IECON'99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society

Author(s): Horstmann, J.T. ; Hilleringmann, U. ; Goser, K.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: San Jose, CA, USA, USA
Conference Date: 29 November 1999
Volume: 1
ISBN (Paper): 0-7803-5735-3
DOI: 10.1109/IECON.1999.822163
Regular:

NMOS-transistors with a gate length down to 30 nm are fabricated applying a modified deposition- and etchback-technique for gate definition using only conventional optical lithography. This leads... View More

Advertisement