IEEE - Institute of Electrical and Electronics Engineers, Inc. - Capacitance-voltage profiling of GaAs metal-semiconductor field-effect transistors and geometrical interelectrode capacitance

1999 9th International Crimean Microwave Conference 'Microwave and Telecommunication Technology'. Conference Proceedings

Author(s): Prokhorov, E. ; Gonzalez-Hernandez, J. ; Gorev, N.B. ; Kodzhespirova, I.F. ; Kovalenko, Yu.A.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Sevastopol, Crimea, Ukraine, Ukraine
Conference Date: 13 September 1999
Page(s): 264 - 265
ISBN (Paper): 966-572-003-1
DOI: 10.1109/CRMICO.1999.815229
Regular:

It is shown that the geometrical interelectrode capacitance of a GaAs metal-semiconductor field-effect transistor (MESFET) must be allowed for when determining the channel doping profile from... View More

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