IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effect of surface treatment during Ge/sup +//B/sup +/ two step ion implantation

1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

Author(s): Matsunaga, Y. ; Murrell, A.J. ; Foad, M.A. ; Adibi, B. ; Asechi, H. ; Saito, S. ; Shishiguchi, S. ; Mineji, A.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 22 June 1998
Volume: 1
ISBN (Paper): 0-7803-4538-X
DOI: 10.1109/IIT.1999.812205
Regular:

For ultra-low energy implantation it is known that the wafer surface condition is very important. Thin oxide formation, for example, significantly affects the dose retention and activation of... View More

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