IEEE - Institute of Electrical and Electronics Engineers, Inc. - Comparison of implant charging results obtained with QUANTOX(R) and CHARM(R)-2

1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

Author(s): Daryanami, S. ; Shields, J.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 22 June 1998
Volume: 1
ISBN (Paper): 0-7803-4538-X
DOI: 10.1109/IIT.1999.812203
Regular:

A comparison of charging results obtained with Quantox(R) and CHARM(R)-2 is presented for the case of arsenic implants at 80 KeV and 20 KeV, performed at doses of 5e14/cm/sup 2/ and 5e15/cm/sup 2/... View More

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