IEEE - Institute of Electrical and Electronics Engineers, Inc. - Reordering of implanted amorphous Si layers with low temperature RTA

1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

Author(s): Nambu, Y. ; Shibata, S. ; Itonaga, K. ; Hashimoto, S. ; Fuse, G.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 22 June 1998
Volume: 1
ISBN (Paper): 0-7803-4538-X
DOI: 10.1109/IIT.1999.812198
Regular:

Reordering of ion implanted amorphous Si layers with rapid thermal annealing (RTA) was investigated with spectroscopic ellipsometry. The reordering rates in the temperature range of 450-550/spl... View More

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