IEEE - Institute of Electrical and Electronics Engineers, Inc. - Characterizing electron shower with CHARM(R)-2 wafers on Eaten NV-8200P medium current ion implanter

1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

Author(s): Reno, S. ; Gonzalez, H. ; Messick, C. ; Lukaszek, W. ; St. Angelo, D.A. ; Becker, K. ; Rogers, B. ; Romanski, T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 22 June 1998
Volume: 1
ISBN (Paper): 0-7803-4538-X
DOI: 10.1109/IIT.1999.812197
Regular:

Avoiding gate oxide damage due to excessive wafer charging has always been an issue with high current implanters. On the other hand, whether it is caused by shrinking of device dimensions, or its... View More

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