IEEE - Institute of Electrical and Electronics Engineers, Inc. - Consideration of photoresist outgassing for MeV ion implantation and cryopump selection

1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

Author(s): Tokoro, N. ; Bowen, C.M. ; LaFontain, M.R. ; Jost, J. ; Woo Jin Lee
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 22 June 1998
Volume: 1
ISBN (Paper): 0-7803-4538-X
DOI: 10.1109/IIT.1999.812191
Regular:

Photoresist outgassing is one of the inherent issues of application of high energy (MeV) ion implantation due to the use of thick photoresist and relatively low dose (low E13 for typical well... View More

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