IEEE - Institute of Electrical and Electronics Engineers, Inc. - Investigation of uniformity degradation by intentionally induced fast beam glitch with a disk-slot batch type endstation

1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

Author(s): Grezeszak, R. ; Tokoro, N. ; Bowen, C. ; Richards, S. ; Yashima, K.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 22 June 1998
Volume: 1
ISBN (Paper): 0-7803-4538-X
DOI: 10.1109/IIT.1999.812190
Regular:

Genus Inc. has recently developed unique circuitry to annihilate a source plasma by reducing the anode voltage of the ion source when a source glitch is detected (an arc recovery circuit). The use... View More

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