IEEE - Institute of Electrical and Electronics Engineers, Inc. - Monitoring charging in high current ion implanters yields optimum preventive maintenance schedules and procedures

1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

Author(s): Gonzalez, H. ; Reno, S. ; Messick, C. ; Lukaszek, W. ; Romanski, T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 22 June 1998
Volume: 1
ISBN (Paper): 0-7803-4538-X
DOI: 10.1109/IIT.1999.812176
Regular:

Gate to substrate charging during high current ion implantation correlates to gate oxide damage seen at product testing or during reliability assessment, as can be discovered by tedious... View More

Advertisement