IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effect of BF/sub 2//sup +/ induced Mo/sup ++/ on long retention time in 0.25 /spl mu/m DRAM technology

1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

Author(s): Curello, G. ; Carroll, D. ; Marley, J. ; Zhang, X.-M. ; Brooks, N. ; Mason, P.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 22 June 1998
Volume: 1
ISBN (Paper): 0-7803-4538-X
DOI: 10.1109/IIT.1999.812175
Regular:

The aim of this work was to establish if molybdenum (Mo) is detrimental to DRAM performance. If so, to determine the limits for the ion source parameters and in turn for the beam currents used in... View More

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