IEEE - Institute of Electrical and Electronics Engineers, Inc. - High density, plasma flood system (HD PFS) yield enhancement for the precision implant 9500

1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

Author(s): Sempek, D. ; Ito, H. ; Asechi, H. ; Reilly, M. ; Vella, M.C.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 22 June 1998
Volume: 1
ISBN (Paper): 0-7803-4538-X
DOI: 10.1109/IIT.1999.812172
Regular:

Thinner gate insulators and larger effective antenna ratios require continuous improvement of charging control for leading edge devices. A beta version of the HD PFS demonstrated a yield advantage... View More

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