IEEE - Institute of Electrical and Electronics Engineers, Inc. - Correlation of threshold voltage (Vt) on long channel transistors with Vt implant dose determined by high precision SIMS

1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

Author(s): Rosenblatt, D.H. ; Rossman, D.M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 22 June 1998
Volume: 1
ISBN (Paper): 0-7803-4538-X
DOI: 10.1109/IIT.1999.812171
Regular:

A large variation in the threshold voltage (Vt) of long channel PMOS transistors was observed over a three month period. The Vt varied for 15 lots by 9.2% (min-to-max). Therma Wave measurements... View More

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