IEEE - Institute of Electrical and Electronics Engineers, Inc. - Retention of mask edge integrity during MeV implants

1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

Author(s): Hoglund, D.E. ; Parrill, T.M. ; Marshall, D.A. ; Ameen, M.S. ; Whiteside, D. ; Dahrooge, G.A. ; Takemura, M. ; Watt, V. ; Zhou, H.Q.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 22 June 1998
Volume: 1
ISBN (Paper): 0-7803-4538-X
DOI: 10.1109/IIT.1999.812168
Regular:

The effect of increasing implant beam currents during MeV well implants on thick photoresist was evaluated in terms of critical dimension (CD) control and mask edge integrity, implant dosimetry,... View More

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