IEEE - Institute of Electrical and Electronics Engineers, Inc. - MeV implanted boron and phosphorus photoresist penetration tests

1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

Author(s): Miller, H.J. ; Jasper, C. ; Smith, T.C. ; Hoover, A. ; Jones, K.S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 22 June 1998
Volume: 1
ISBN (Paper): 0-7803-4538-X
DOI: 10.1109/IIT.1999.812165
Regular:

With the introduction of new semiconductor technologies more processes are requiring the use of high energy (MeV) ion implantation. When fabricating semiconductor devices, it is important to... View More

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