IEEE - Institute of Electrical and Electronics Engineers, Inc. - Time dependent effects in photoresist outgassing

1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

Author(s): Perel, A.S. ; Horsky, T.N. ; Sinclair, F.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 22 June 1998
Volume: 1
ISBN (Paper): 0-7803-4538-X
DOI: 10.1109/IIT.1999.812164
Regular:

Ion implantation into photoresist wafers gives rise to large quantities of photoresist outgassing. The purpose of this undertaking was to determine the time dependence of the outgassing rate.... View More

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