IEEE - Institute of Electrical and Electronics Engineers, Inc. - Electrical behaviour associated with defect tails in germanium implanted silicon

1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

Author(s): Nejim, A. ; Gwilliam, R.M. ; Emerson, N.G. ; Knights, A.P. ; Cristiano, F. ; Barradas, N.P. ; Jeynes, C.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 22 June 1998
Volume: 1
ISBN (Paper): 0-7803-4538-X
DOI: 10.1109/IIT.1999.812163
Regular:

In this study the impact of the defect tails generated by germanium implantation into n-type silicon wafers on the deep energy states, the doping profiles and mobilities, are investigated. 100 mm... View More

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