IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effect of photo-resist treatment on out-gassing in high energy implantation

1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

Author(s): Hong, S.K. ; Jeon, S.H. ; Min, K. ; Sohn, Y.S. ; Lee, S.K. ; Ahn, D.J.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 22 June 1998
Volume: 1
ISBN (Paper): 0-7803-4538-X
DOI: 10.1109/IIT.1999.812160
Regular:

To reduce the out-gassing level of thick photoresist films for high energy implantation, we have examined different types of the resist treatment such as the methods of hard bake, UV bake and... View More

Advertisement