IEEE - Institute of Electrical and Electronics Engineers, Inc. - Optimized charge control for high current ion implantation

1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

Author(s): Mack, M.E. ; Pharand, M. ; Ameen, M.S. ; Graf, M. ; Sawyer, W. ; Lustiber, P. ; Fish, D. ; Moser, B.G. ; Kabasawa, M. ; Okada, K. ; Kawaguchi, H. ; Mason, P. ; Persson, E. ; Santiesteban, R.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 22 June 1998
Volume: 1
ISBN (Paper): 0-7803-4538-X
DOI: 10.1109/IIT.1999.812158
Regular:

A plasma flood system has been developed, having an electron temperature of only 1 eV and a current capability in excess of 100 mA. The design has been carefully optimized to minimize metals... View More

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