IEEE - Institute of Electrical and Electronics Engineers, Inc. - Wafer floating potential for a high current serial ion implantation system

1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

Author(s): Radovanov, S.B. ; Corey, P. ; Angel, G. ; Brown, D.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 22 June 1998
Volume: 1
ISBN (Paper): 0-7803-4538-X
DOI: 10.1109/IIT.1999.812157
Regular:

In situ wafer floating potential measurements were made during high current high dose ion implants. Implants were performed on a ribbon beam implanter, the Varian VIISta 80, that uses a plasma... View More

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