IEEE - Institute of Electrical and Electronics Engineers, Inc. - Evaluation of high dose ion implantation by spectroscopic ellipsometry

1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

Author(s): Shibata, S. ; Nambu, Y. ; Etoh, R. ; Fuse, G.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 22 June 1998
Volume: 1
ISBN (Paper): 0-7803-4538-X
DOI: 10.1109/IIT.1999.812153
Regular:

The thickness of amorphous layer formed by high dose ion implantation was measured by spectroscopic ellipsometry. The amorphous layer thickness, derived through a harmonic oscillator model using... View More

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