IEEE - Institute of Electrical and Electronics Engineers, Inc. - Comparison of charge control technologies for advanced high current ion implantation systems

1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

Author(s): Erokhin, Y. ; Sawyer, W. ; Mack, M.E. ; Santiesteban, R. ; Mason, P. ; Persson, E. ; Treible, R.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 22 June 1998
Volume: 1
ISBN (Paper): 0-7803-4538-X
DOI: 10.1109/IIT.1999.812147
Regular:

Reduction of gate oxide thickness with device design rule dictates increasingly precise compensation of ion beam positive space charge with electrons and reduction of beam potential. In the... View More

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