IEEE - Institute of Electrical and Electronics Engineers, Inc. - Beam parallelism in the 8250 medium current implanter

1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

Author(s): Rathmell, R.D. ; Kamenitsa, D.E. ; King, M.L. ; Ray, A.M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 22 June 1998
Volume: 1
ISBN (Paper): 0-7803-4538-X
DOI: 10.1109/IIT.1999.812136
Regular:

Small variations in beam angle across the wafer can affect the apparent dose uniformity and implant depth under conditions where channeling of the implanted ions is possible. The depth profile of... View More

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