10 mA) ion implantation is becoming essential. We introduce a new beam handling technique in which a" name="description" />

IEEE - Institute of Electrical and Electronics Engineers, Inc. - Development of a large-area beam mass analyzer

1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

Author(s): Takahashi, M. ; Sakai, S. ; Aoki, M. ; Tanjyo, M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 22 June 1998
Volume: 1
ISBN (Paper): 0-7803-4538-X
DOI: 10.1109/IIT.1999.812119
Regular:

In order to form an ultra-shallow junction in deep sub-micron devices using 12" wafer, a low energy (<1 keV) and high current (>10 mA) ion implantation is becoming essential. We introduce a... View More

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