IEEE - Institute of Electrical and Electronics Engineers, Inc. - A global model for BF/sub 3/ plasma in a RF-driven multicusp ion source

1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

Author(s): Graf, M.A. ; Benveniste, V. ; Lieberman, M.A.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 22 June 1998
Volume: 1
ISBN (Paper): 0-7803-4538-X
DOI: 10.1109/IIT.1999.812112
Regular:

A volume averaged model for BF/sub 3/ discharges in a RF-driven, inductively coupled multicusp ion source, such as that used on the ULE2 ion implanter, has been developed. Particle and energy... View More

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