IEEE - Institute of Electrical and Electronics Engineers, Inc. - High energy aluminum ion implantation using a variable energy RFQ ion implanter

1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

Author(s): Amemiya, K. ; Ito, J. ; Tokiguchi, K.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 22 June 1998
Volume: 1
ISBN (Paper): 0-7803-4538-X
DOI: 10.1109/IIT.1999.812109
Regular:

A high energy aluminum ion implantation technique has been studied for the fabrication of high power semiconductor devices. A high current MeV ion implanter using a variable energy RFQ linac was... View More

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