IEEE - Institute of Electrical and Electronics Engineers, Inc. - Production-worthy shallow junction formation for sub-micron technologies using electron-volt ion implantation in the applied materials xR LEAP/sup TM/

1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

Author(s): Murrell, A.J. ; Collart, E.J.H. ; Foad, M.A. ; De Cock, G. ; Wagner, D. ; Matsunaga, Y.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 22 June 1998
Volume: 1
ISBN (Paper): 0-7803-4538-X
DOI: 10.1109/IIT.1999.812090
Regular:

The Applied Materials xR LEAP implanter has been used, in combination with rapid thermal annealing in the RTP Centura, to demonstrate ultra-shallow junction (USJ) profiles suitable for 0.25, 0.18... View More

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