IEEE - Institute of Electrical and Electronics Engineers, Inc. - Suppression of lateral transient enhanced dopant diffusion by nitrogen implantation and its application to fully depleted MOSFETs/SIMOX

1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

Author(s): Nakashima, S. ; Takahashi, M. ; Nakayama, S. ; Ohno, T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 22 June 1998
Volume: 1
ISBN (Paper): 0-7803-4538-X
DOI: 10.1109/IIT.1999.812067
Regular:

This paper confirms that nitrogen ion implantation is effective in suppressing the lateral transient enhanced diffusion (TED) of implanted impurity dopants during annealing and that the suppressed... View More

Advertisement