IEEE - Institute of Electrical and Electronics Engineers, Inc. - High dose p+ buried layers for reduced diode leakage

1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

Author(s): Rubin, L.M. ; Lee, K.H. ; Oh, J.G. ; Lee, J.Y. ; Lee, S.K.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 22 June 1998
Volume: 1
ISBN (Paper): 0-7803-4538-X
DOI: 10.1109/IIT.1999.812062
Regular:

We report on the effectiveness of moderate to high dose (1/spl times/10/sup 14/ cm/sup -2/-1/spl times/10/sup 15/ cm/sup -2/) blanket boron implants (1.8 MeV) at reducing diode leakage and... View More

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