IEEE - Institute of Electrical and Electronics Engineers, Inc. - Formation of shallow P-type layers by implantation of molecular diborane ions

1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

Author(s): Yokota, K. ; Nishimura, H. ; Terada, K. ; Nakamura, K. ; Sakai, S. ; Tanjou, M. ; Takano, H. ; Kumagai, M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 22 June 1998
Volume: 1
ISBN (Paper): 0-7803-4538-X
DOI: 10.1109/IIT.1999.812059
Regular:

Shallow p-type layers were fabricated on n-type silicon by implantation of molecular diborane ions. The ion source used was operated from B/sub 2/H/sub 6/ diluted with hydrogen. Ion species, such... View More

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