IEEE - Institute of Electrical and Electronics Engineers, Inc. - High quality shallow p/sup +/-n junction formation by employing BF/sub 2//low energy /sup 11/B mixed ion implant process

1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

Author(s): Dong-Ho Lee ; Yong-Sun Sohn ; Kvung-youl Min ; Seung-Woo Jin ; Shin-Kook Lee ; Dong-Joon Ahn
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 22 June 1998
Volume: 1
ISBN (Paper): 0-7803-4538-X
DOI: 10.1109/IIT.1999.812057
Regular:

BF/sub 2//low energy /sup 11/B mixed ion implantation has been investigated as a new method of forming high quality shallow p/sup +/-n junctions and compared with other methods such as... View More

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