IEEE - Institute of Electrical and Electronics Engineers, Inc. - Advanced processing technique to minimize enhanced diffusion in sub-keV boron implants

1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

Author(s): Downey, D.F. ; Brown, D. ; Cummings, J.J. ; Bertuch, A.F. ; Ishida, E. ; Che-Hoo Ng
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 22 June 1998
Volume: 1
ISBN (Paper): 0-7803-4538-X
DOI: 10.1109/IIT.1999.812050
Regular:

The Varian VIISta 80 and the Varian VIISion 80 PLUS ion implanters were used to implant wafers with doses of 2.5e14/cm/sup 2/ to 2.8e15/cm/sup 2/ for /sup 11/B/sup +/ at 1.0 keV, 0.5 keV and 0.25... View More

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