IEEE - Institute of Electrical and Electronics Engineers, Inc. - The effect of implant species and doping level on cobalt silicide contact formation on ultra-shallow junctions

1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

Author(s): Osburn, C.M. ; Ishida, E. ; Downey, D.F. ; Variam, N. ; Stockwell, W.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 22 June 1998
Volume: 1
ISBN (Paper): 0-7803-4538-X
DOI: 10.1109/IIT.1999.812049
Regular:

Cobalt silicide layer formation on ultra-shallow junctions (<100 nm deep) was studied as a function of junction doping species and concentration over the range from below the electrical... View More

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