IEEE - Institute of Electrical and Electronics Engineers, Inc. - Reduction of point defects in PMOS source/drain formation

1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

Author(s): Mineji, A. ; Shishiguchi, S. ; Matsuda, T. ; Saito, S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 22 June 1998
Volume: 1
ISBN (Paper): 0-7803-4538-X
DOI: 10.1109/IIT.1999.812045
Regular:

In deep sub-quarter micron surface channel pMOS fabrication, this paper investigates the effects of point defects induced by implantation for source/drain formation, and proposes a junction... View More

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