IEEE - Institute of Electrical and Electronics Engineers, Inc. - Implantation of nitrogen into polysilicon to suppress boron penetration through the gate oxide

1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

Author(s): Bauer, A.J. ; Mayer, P. ; Frey, L. ; Haublein, V. ; Ryssel, H.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 22 June 1998
Volume: 1
ISBN (Paper): 0-7803-4538-X
DOI: 10.1109/IIT.1999.812044
Regular:

Nitrogen implantation into polysilicon gate is a new alternative to retard boron penetration. The effect of nitrogen implantation into polysilicon gates on 4 to 4.5 nm gate oxides was... View More

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