IEEE - Institute of Electrical and Electronics Engineers, Inc. - Ultra-shallow junctions and the effect of ramp-up rate during spike anneals in lamp-based and hot-walled RTP systems

1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98

Author(s): Agarwal, A. ; Fiory, A.T. ; Gossmann, H.-J. ; Rafferty, C. ; Frisella, P. ; Hebb, J. ; Jackson, J.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Kyoto, Japan, Japan
Conference Date: 22 June 1998
Volume: 1
ISBN (Paper): 0-7803-4538-X
DOI: 10.1109/IIT.1999.812042
Regular:

Ultra-shallow p-type junction formation has been investigated using 1050/spl deg/C spike anneals in lamp-based and hot-walled rapid thermal processing (RTP) systems. A spike anneal may be... View More

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