IEEE - Institute of Electrical and Electronics Engineers, Inc. - Study of the thermal drift of the offset voltage of silicon pressure sensor

ICECS'99. Proceedings of ICECS'99. 6th IEEE International Conference on Electronics, Circuits and Systems

Author(s): Boukabache, A. ; Blasquez, G. ; Pons, P. ; Dibi, Z.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Pafos, Cyprus, Cyprus
Conference Date: 5 September 1999
Volume: 2
ISBN (Paper): 0-7803-5682-9
DOI: 10.1109/ICECS.1999.813414
Regular:

Pressure sensors produced using microelectronic techniques, in particular those based on the piezoresistive effect of silicon, present a high gauge factor. However, the electrical behaviour of the... View More

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