IEEE - Institute of Electrical and Electronics Engineers, Inc. - A new 5-parameter MOS transistors mismatch model

ICECS'99. Proceedings of ICECS'99. 6th IEEE International Conference on Electronics, Circuits and Systems

Author(s): Serrano-Gotarredona, T. ; Linares-Barranco, B.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Pafos, Cyprus, Cyprus
Conference Date: 5 September 1999
Volume: 1
ISBN (Paper): 0-7803-5682-9
DOI: 10.1109/ICECS.1999.812286
Regular:

A new 5-parameter MOS transistor mismatch model is introduced capable of predicting transistor mismatch with very high accuracy for ohmic and saturation strong inversion regions, including short... View More

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