IEEE - Institute of Electrical and Electronics Engineers, Inc. - Characterization and reduction of edge leakage current in AlGaAs/GaAs heterojunction bipolar transistors for high frequency applications

MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1999 High Frequency Postgraduate Student Colloquium

Author(s): Bansropun, S. ; Wood, R.C.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: Leeds, UK, UK
Conference Date: 17 September 1999
Page(s): 93 - 98
ISBN (Paper): 0-7803-5577-6
DOI: 10.1109/HFPSC.1999.809286
Regular:

N-p-n AlGaAs/GaAs heterojunction bipolar transistors of various emitter-mesa diameters have been fabricated to investigate the dependence on structural design considerations of the edge leakage... View More

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