IEEE - Institute of Electrical and Electronics Engineers, Inc. - Influence of the amount of InAs on InAs quantum dots on thin GaAs tensile-strained layer on [001] InP substrate

1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting

Author(s): Guotong Du ; Xinqiang Wang ; Mingtao Li ; Zhi Jin ; Jingzhi Yin ; Zhengting Li ; Shiyong Liu ; Shuren Yang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: San Francisco, CA, USA, USA
Conference Date: 8 November 1999
Volume: 1
ISBN (Paper): 0-7803-5634-9
ISSN (Paper): 1092-8081
DOI: 10.1109/LEOS.1999.813637
Regular:

We study the behavior of InAs QDs on thin tensile-strained GaAs layer with different amount of InAs. The samples are grown by LP-MOCVD using TMIn, TMGa, pure AsH/sub 3/ and 10% PH/sub 3/ as... View More

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