IEEE - Institute of Electrical and Electronics Engineers, Inc. - Comparison of GaInNAs/GaAs and strain-compensated InGaAs/GaAsP quantum wells for 1200-1300 nm diode lasers

1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting

Author(s): Hetterich, M. ; Dawson, M.D. ; Egorov, A.Yu. ; Bernklau, D. ; Riechert, H. ; Bland, S.W. ; Davies, J.I. ; Geen, M.D.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: San Francisco, CA, USA, USA
Conference Date: 8 November 1999
Volume: 1
ISBN (Paper): 0-7803-5634-9
ISSN (Paper): 1092-8081
DOI: 10.1109/LEOS.1999.813636
Regular:

We investigate the optical properties (photoluminescence and photoluminescence excitation spectra) of GaInNAs/GaAs quantum wells and discuss problems caused by the presence of nitrogen in the... View More

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