IEEE - Institute of Electrical and Electronics Engineers, Inc. - Low threshold current, high efficiency 1.3 /spl mu/m wavelength InGaAsN-GaAs based quantum well lasers

1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting

Author(s): Gokhale, M.R. ; Jian Wei ; Studenkov, P. ; Forrest, S.R.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: San Francisco, CA, USA, USA
Conference Date: 8 November 1999
Volume: 1
ISBN (Paper): 0-7803-5634-9
ISSN (Paper): 1092-8081
DOI: 10.1109/LEOS.1999.813635
Regular:

We report continuous wave (CW) operation for InGaAsN lasers up to 1.32 /spl mu/m. Also record low threshold current density J/sub TH/=2.7 kA/cm/sup 2/ (CW) at /spl lambda/=1.3 /spl mu/m, and... View More

Advertisement