IEEE - Institute of Electrical and Electronics Engineers, Inc. - Room temperature electroluminescence at 1.3 /spl mu/m from strained InAs/GaAs quantum dots

1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting

Author(s): Mukhametzhandov, I. ; Madhukar, A.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: San Francisco, CA, USA, USA
Conference Date: 8 November 1999
Volume: 1
ISBN (Paper): 0-7803-5634-9
ISSN (Paper): 1092-8081
DOI: 10.1109/LEOS.1999.813604
Regular:

Summary form only given. Strong room temperature photoluminescence (PL) centered at 1.30 /spl mu/m with linewidth 21 meV has been achieved in bilayer stacks of InAs island quantum dots (QDs) on... View More

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