IEEE - Institute of Electrical and Electronics Engineers, Inc. - Processing and characterization of a GaAs/Al/sub x/O/sub y/ quasi-three-dimensional photonic bandgap material

1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting

Author(s): Zhou, W.D. ; Bhattacharya, P. ; Sabarinathan, J. ; Zhu, D.H. ; Saber Hehny, A. ; Marsh, J.H.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: San Francisco, CA, USA, USA
Conference Date: 8 November 1999
Volume: 1
ISBN (Paper): 0-7803-5634-9
ISSN (Paper): 1092-8081
DOI: 10.1109/LEOS.1999.813566
Regular:

We report a relatively simple technique to realize a GaAs-based quasi-3D photonic bandgap (PBG) material with an index contrast of /spl sim/2, in which a single epitaxial growth and... View More

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