IEEE - Institute of Electrical and Electronics Engineers, Inc. - Degradation of proton implanted VCSEL's due to electrostatic discharge pulses

1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting

Author(s): Neitzert, H.C. ; Gobbi, B.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: San Francisco, CA, USA, USA
Conference Date: 8 November 1999
Volume: 1
ISBN (Paper): 0-7803-5634-9
ISSN (Paper): 1092-8081
DOI: 10.1109/LEOS.1999.813549
Regular:

We performed step-stress human body model electrostatic discharge tests both under fonvard and under reverse bias conditions with the ESD pulse amplitude increasing in 50 V steps. In the case of... View More

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