IEEE - Institute of Electrical and Electronics Engineers, Inc. - Reliability of 0.98-1.02 /spl mu/m InGaAs laser diodes-improvement by low temperature growth of active layer

1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting

Author(s): Nozawa, H. ; Sasaki, T. ; Amano, C. ; Temmyo, J. ; Munoz, E.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: San Francisco, CA, USA, USA
Conference Date: 8 November 1999
Volume: 1
ISBN (Paper): 0-7803-5634-9
ISSN (Paper): 1092-8081
DOI: 10.1109/LEOS.1999.813547
Regular:

InGaAs strained-quantum-well (QW) laser diodes (LDs) cover the lasing wavelength from 0.9 to 1.1 /spl mu/m and are important pumping sources for fiber amplifiers. The 0.98-/spl mu/m LD has... View More

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