IEEE - Institute of Electrical and Electronics Engineers, Inc. - High-power AlInGaAs-GaAs double and triple microstack lasers at 808 nm

1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting

Author(s): Hanke, C. ; Korte, L. ; Acklin, B. ; Behringer, M. ; Luft, J.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: San Francisco, CA, USA, USA
Conference Date: 8 November 1999
Volume: 1
ISBN (Paper): 0-7803-5634-9
ISSN (Paper): 1092-8081
DOI: 10.1109/LEOS.1999.813486
Regular:

The basic structure of a triple microstack laser is shown. Each independent laser consists ofa conventional LOC-SCH-structure with an AlInGaAs-AlInAs double quantum well as active layer designed... View More

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