IEEE - Institute of Electrical and Electronics Engineers, Inc. - High performance InGaAs/InGaAsP/AlGaAs diode lasers (/spl lambda/=0.98 /spl mu/m) grown by MOCVD

1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting

Author(s): Yang, G. ; Hwu, R.J. ; Chern, J.H. ; Sadwick, L. ; Xu, Z.T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: San Francisco, CA, USA, USA
Conference Date: 8 November 1999
Volume: 1
ISBN (Paper): 0-7803-5634-9
ISSN (Paper): 1092-8081
DOI: 10.1109/LEOS.1999.813484
Regular:

We have successfully fabricated high performance 0.98 /spl mu/m InGaAs-InGaAsP-AlGaAs diode lasers. This material system demonstrated the advantages of flexibility in structure design,... View More

Advertisement