IEEE - Institute of Electrical and Electronics Engineers, Inc. - Growth and characterization of ultra-thin GaN/sub x/As/sub 1-x/ on GaAs substrate by plasma-assisted molecular beam epitaxy

1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting

Author(s): Pan, Z. ; Li, L.H. ; Zhang, W. ; Lin, Y.W. ; Zhou, Z.Q. ; Wu, R.H.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: San Francisco, CA, USA, USA
Conference Date: 8 November 1999
Volume: 1
ISBN (Paper): 0-7803-5634-9
ISSN (Paper): 1092-8081
DOI: 10.1109/LEOS.1999.813462
Regular:

We investigate the growth of ultrathin GaNAs on GaAs by a plasma-assisted MBE. The evolution of surface reconstruction, strain relaxation and optical properties have been studied by RHEED,... View More

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