IEEE - Institute of Electrical and Electronics Engineers, Inc. - Present status of InGaN-based violet laser diodes

1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting

Author(s): Nakamura, S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: San Francisco, CA, USA, USA
Conference Date: 8 November 1999
Volume: 1
ISBN (Paper): 0-7803-5634-9
ISSN (Paper): 1092-8081
DOI: 10.1109/LEOS.1999.813461
Regular:

InGaN-GaN-AlGaN SCH MQW LDs were fabricated on an epitaxially laterally overgrown GaN (ELOG) substrate grown by MOCVD. The LDs with cleaved mirror facets showed an output power as high as 40 mW... View More

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