IEEE - Institute of Electrical and Electronics Engineers, Inc. - 3-level quasi-CW laser operation and Q-switching of Yb:S-FAP at 985 nm
1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting
|Author(s):||Bayramian, A.J. ; Bibeau, C. ; Marshall, C.D. ; Payne, S.A. ; Krupke, W.F.|
|Publisher:||IEEE - Institute of Electrical and Electronics Engineers, Inc.|
|Publication Date:||1 January 1999|
|Conference Location:||San Francisco, CA, USA, USA|
|Conference Date:||8 November 1999|
We have achieved 3-level quasi-CW lasing at 985 nm in Yb:S-FAP for the first time. A maximum slope efficiency of 75% was achieved at a threshold energy of 18 mJ.