IEEE - Institute of Electrical and Electronics Engineers, Inc. - 3-level quasi-CW laser operation and Q-switching of Yb:S-FAP at 985 nm

1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting

Author(s): Bayramian, A.J. ; Bibeau, C. ; Marshall, C.D. ; Payne, S.A. ; Krupke, W.F.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1999
Conference Location: San Francisco, CA, USA, USA
Conference Date: 8 November 1999
Volume: 2
ISBN (Paper): 0-7803-5634-9
ISSN (Paper): 1092-8081
DOI: 10.1109/LEOS.1999.812031
Regular:

We have achieved 3-level quasi-CW lasing at 985 nm in Yb:S-FAP for the first time. A maximum slope efficiency of 75% was achieved at a threshold energy of 18 mJ.

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